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| NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.03 (max) NUltra High-Speed Switching NSOP-8 Package GNotebook PCs GCellular and portable phones GOn-board power supplies GLi-ion battery systems The XP131A1330SR is an N-Channel Power MOS FET with low onstate resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Low on-state resistance : Rds (on) = 0.03 ( Vgs = 4.5V ) : Rds (on) = 0.04 ( Vgs = 2.5V ) : Rds (on) = 0.07 ( Vgs = 1.5V ) Ultra high-speed switching Operational Voltage : 1.5V High density mounting : SOP-8 11 699 DC Characteristics PARAMETER Drain Cut-Off Current Gate-Source Leakage Current Gate-Source Cut-Off Voltage Drain-Source On-State Resistance ( note ) Rds ( on ) SYMBOL Idss Igss Vgs (off ) CONDITIONS Vds = 20V , Vgs = 0V Vgs = 8V , Vds = 0V Id = 1mA , Vds = 10V Id = 4A , Vgs = 4.5V Id = 4A , Vgs = 2.5V Id = 4A , Vgs = 1.5V Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. | Yfs | Vf Id = 4A , Vds = 10V If = 8A , Vgs = 0V 0.5 0.025 0.03 0.045 22 0.85 1.1 MIN TYP MAX 10 1 Ta=25C UNITS A A V S V 1.2 0.03 0.04 0.07 Dynamic Characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds = 10V , Vgs = 0V f = 1 MHz MIN TYP 950 430 180 MAX Ta=25C UNITS pF pF pF Switching Characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 4A Vdd = 10V CONDITIONS MIN TYP 15 20 80 15 MAX Ta=25C UNITS ns ns ns ns 11 Thermal Characteristics PARAMETER Thermal Resistance ( channel-ambience ) SYMBOL Rth ( ch-a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 50 MAX UNITS C / W 700 11 701 11 702 |
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